β: This English translation is in beta — the Traditional-Chinese original is the authoritative version.
Flicker noise upconversion into 1/f³ phase noise
Prerequisites: white_noise_to_phase_noise (the same mechanism, white noise → ), fourier_series_of_isf (the role of the DC term ), rms_isf (the -to- ratio sets the corner).
Hands-on verification: this page's "symmetric vs asymmetric waveforms decide close-in " simulation is in lab_07.
The previous page white_noise_to_phase_noise explained how white noise turns into . But look at any real oscillator's phase-noise plot: the segment closest to the carrier is usually steeper — slope dB/decade, i.e. . Where does this steep skirt come from? Answer: device flicker noise ( noise, the noise that is especially strong in transistors at low frequency) gets "upconverted" by the oscillator to the vicinity of the carrier.
This page answers three things: (1) what flicker noise is, (2) why only the ISF's DC term can upconvert it, (3) why the corner is not equal to the device's corner, and how waveform symmetry helps.
Physical intuition (conclusion first): low-frequency flicker noise itself lives at baseband (near DC). For it to show up near the carrier, some mechanism must "move" it up to . The ISF is a periodic function, and in its Fourier series the only DC component is . Only this DC term multiplies the "flicker sitting right next to DC" and gets accumulated by the phase integrator into close-in phase jitter. In other words: is flicker's only gate to the carrier. Push to 0 (via waveform symmetry) and that gate closes — the skirt drops dramatically.
Step 1: what flicker noise is, and how to model it
Flicker () noise is the transistor's intrinsic low-frequency noise; its PSD rises toward low frequency (), usually attributed to carrier trapping/release at the channel–oxide interface. Below the device's corner , flicker exceeds white noise; above it, white noise dominates. [P1] describes it with a compact model ([P1] Eq.(22), p.185):
- How to read it: is the white-noise floor (per-Hz); multiplied by , it is amplified when and rises as — exactly the shape. At the two are equal (the definition of the corner).
- Unit check: is dimensionless (rad/s divided by rad/s); multiplying () still gives ✓.
- Watch the notation: is the device corner (rad/s), set by the transistor process — a different thing from the phase-noise corner that appears later (see Step 4; the notation page warns about this explicitly).
Step 2: why low-frequency noise must be "upconverted" to be visible
Return to the harmonic-decomposition phase response of [P1] Eq.(13), p.183:
Flicker's energy is concentrated at low frequency (near DC). Look at each term in the sum:
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Every term carries — it downconverts noise sitting "right around " to baseband. But flicker has almost no energy at (, which is high), so these terms cannot capture flicker.
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Only the (DC) term has no multiplier — it directly integrates baseband noise. Flicker's energy is exactly at baseband, so only this term accumulates flicker into phase.
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Math used: frequency translation (mixing). noise moves noise to ; only the DC multiplier () leaves baseband noise at baseband to be integrated.
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Physical meaning (claim C4): (the ISF's DC Fourier coefficient) is the only channel from flicker to close-in. With , flicker simply never gets up there and the skirt vanishes.
Step 3: deriving the 1/f³ phase noise (step-by-step algebra, Eq.(22)→(23))
This step "multiplies" three things together: (i) flicker injected via , (ii) the mechanism (the integrator), (iii) and the product is . No skipped steps — we compute line by line.
Step 3.1: the white-noise sum keeps only the DC term. The white-noise result (spec Section 3, formula 10; [P1] Eq.(19), p.185) is
Flicker's energy is only at baseband; from Step 2, only the (DC) term can capture it (the remaining terms carry , moving the noise to , where flicker has no energy). So for flicker, the sum collapses to the single term :
- Why this pairs with the in the denominator: Eq.(19)'s denominator is and its numerator carries . The DC term of the ISF Fourier series ([P1] Eq.(12)) is written , but in Parseval ([P1] Eq.(20)) the DC power coefficient is recorded as (the same convention as the other ), so we substitute directly and keep the in the denominator. Substituting gives the "DC-only, still white-noise" intermediate form:
Step 3.2: replace the white-noise floor with flicker (multiply by the amplification factor of Eq.(22)). The in the numerator above is still the white-noise floor. Device flicker ([P1] Eq.(22), p.185) says that for , the current noise is amplified by :
Replacing the numerator's with is exactly the product "flicker mechanism × mechanism":
Step 3.3: combine to get [P1] Eq.(23). Multiplying the two brackets and putting back the yields the flicker-upconverted phase noise ([P1] Eq.(23), p.185):
- See the ? The denominator has (the integrator, ) times one more (flicker's ), together . One decade up drops it × dB slope dB/decade ✓.
- Key contrast: the white-noise result carries (all harmonics, ); the flicker result carries (DC only). This is the mathematical root of "symmetry can only save flicker, not white noise" — in Step 4, dividing these two numerators directly yields the corner.
- Unit check: relative to the white-noise formula we multiplied by the dimensionless (rad/s ÷ rad/s); dimensions unchanged, still per-Hz ✓.
Step 4: the 1/f³ corner (Eq.(24)) — it is not the device 1/f corner
On the phase-noise spectrum, the offset where the segment meets the segment is called the corner . Set the expression (Eq.(23), with ) equal to the expression (Eq.(21), with ) and solve for the intersection ([P1] Eq.(24), p.185):
Step-by-step algebra (solving for the intersection, no skipped steps): the corner is defined as the where " segment = segment". Set the two brackets inside the equal (equal logs ⇔ equal arguments):
- Step (a): cancel the common factors. Both sides carry and ; divide them out:
- Step (b): solve for . Multiply both sides by , then divide by :
, giving exactly the boxed ✓. Note the factor here is (not ); it comes from the ratio of the in Eq.(23)'s denominator to the in Eq.(21)'s denominator.
- The most important concept on this page (claim C5): . The corner equals the device's corner times the ratio . Because a symmetric waveform has , this ratio is far below 1, so the corner is pushed far below the device's corner. This overturns the myth of the early empirical model " corner device corner" — [P1]'s abstract and introduction emphasize that "contrary to widely held beliefs, the corner is smaller than the device corner by a factor determined by waveform symmetry".
- Where comes from: when the ISF is fundamental-dominated, (Parseval keeps only the term); substituting gives the right-hand form. It lets you estimate the corner directly from "DC coefficient vs fundamental coefficient".
- Unit check: (rad/s) times a dimensionless ratio → rad/s ✓, an angular frequency.
Step 5: why waveform symmetry determines
is the ISF's DC Fourier coefficient; the ISF's DC value is (the notation trap flagged on the notation page). The DC value is the ISF's average over one period. [P1] points out in the design section (p.187–188, Fig. 16):
The DC value of the ISF is determined by the waveform's symmetry, in particular its rise/fall symmetry. If the rise time and fall time differ significantly, the ISF has a large DC value (large ).
Intuition: the ISF swings positive and negative in the "sensitive region" (near the waveform transitions). If the rising and falling segments are mirror-symmetric, the positive and negative swings cancel and the average (small ); if they are asymmetric (e.g. fast rise, slow fall), they do not cancel, the average is nonzero (large ), and flicker's gate opens wide.
- Odd-symmetric waveforms (odd-symmetric, e.g. an ideal , antiphase over half a period) have — an excellent special case; but [P1] clarifies explicitly: small is not limited to odd-symmetric waveforms — rise/fall symmetry alone suffices, a much broader class.
- Toy contrast: lab_05 uses (symmetric, ) against (deliberately added DC, ) to show directly whether the DC term is present.

| Waveform | ISF DC value | Flicker upconversion | |
|---|---|---|---|
| Symmetric (, rise=fall) | almost no | ||
| Asymmetric () | pronounced skirt |
Step 6: how differential / complementary waveforms help — and their limits
In practice two tricks are commonly used to approach symmetry and suppress :
- Differential: use a pair of complementary nodes to cancel even harmonics and common-mode error, improving symmetry.
- Complementary (complementary CMOS, symmetric PMOS/NMOS arrangement): deliberately match pull-up/pull-down so that rise/fall times are equal → rise/fall symmetry → small .
[P2] (the ring-oscillator paper) confirms this rule directly by experiment: phase noise varies with the "symmetry control voltage" and reaches a minimum at the symmetry point, and the corner drops sharply at the symmetry point ([P2] Fig. 17, p.802; corresponds to claim C4).

Limits (honesty note) — [P2] also points out (Sec. VII Design Implications, p.798, original text):
- Differential symmetry is not necessarily enough: [P2] states plainly that "differential symmetry is insufficient"; what is needed is rise/fall symmetry within each half period, not merely symmetry between the two differential branches.
- The tail / bias source is a major leak: the ISF of the tail current source often has a large DC value, strongly upconverting the tail's flicker, which frequently dominates close-in noise. Symmetrizing the main signal path does not help — the tail must be handled separately.
- More linear loads help: [P2] recommends more linear loads (e.g. resistors or long-channel devices) to make the waveform more symmetric and push the corner further down.
- Even so, symmetry only suppresses flicker (); it does not change the white-noise region (that region is set by , not ). Do not expect symmetry to rescue the whole curve.
Numerical example (building intuition)
Continuing Example B: GHz, pC, . Assume a device corner MHz ( rad/s). Compare the corner for a symmetric () and an asymmetric () waveform.
Using [P1] Eq.(24): , .
Asymmetric (, ):
Symmetric (, ):
- Feel for it: the device corner is 1 MHz in both cases, but the phase-noise corner drops from 320 kHz (asymmetric) to 3.2 kHz (symmetric) — a full 100× lower (because differs by 100×). This is the numerical picture of " corner ≠ device corner": good symmetry pushes the steep skirt in very close to the carrier, leaving the close-in region much cleaner.
- Dimension check: the corner is a frequency; (dimensionless ratio) frequency ✓.
Corresponding simulation plot (toy model, not transistor-level)
lab_07 feeds flicker current into a symmetric
(, ) and an asymmetric () toy ISF and estimates the close-in phase PSD: the symmetric case shows almost no
, while the asymmetric case shows a clear dB/decade skirt. For a visualization of see lab_05's
symmetric_vs_asymmetric_isf_c0.png (table above).
Core Python (full script: simulations/lab_07_flicker_noise.py):
import numpy as np
from simulations.common.noise_utils import flicker_noise, estimate_psd
from simulations.common.isf_utils import gamma_symmetric, gamma_asymmetric
fs, n, qmax = 256.0, 2**20, 1.0
t = np.arange(n) / fs
theta = 2 * np.pi * 1.0 * t # f0 = 1 (toy normalized frequency)
i_f = flicker_noise(n, fs, k_flicker=1e-4) # 1/f current
# ISF weighting + integrator: phi = cumsum(Gamma * i_n / qmax) / fs
def phase_from_isf(i_n, gamma_vals, q_max, fs):
g = gamma_vals * i_n / q_max
return np.cumsum(g) / fs
gamma_sym = gamma_symmetric(theta) # c0 = 0
gamma_asym = gamma_asymmetric(theta, alpha=0.5) # c0 = 2*alpha = 1.0 (DC = 0.5)
phi_sym = phase_from_isf(i_f, gamma_sym, qmax, fs) # symmetric -> close-in nearly flat
phi_asym = phase_from_isf(i_f, gamma_asym, qmax, fs) # asymmetric -> 1/f^3 skirt
Applicability and failure conditions
| Condition | When it holds | What happens when it fails |
|---|---|---|